尊敬的业内同仁，您好！

北京天科合达半导体股份有限公司诚挚地邀请您参加11月6日-8日在中国深圳·深圳坪山格兰云天国际酒店举办的第五届亚太碳化硅及相关材料国际会议。

在会议期间，北京天科合达半导体股份有限公司将作为特别赞助商在VIP01展台上展出最新产品和技术，我们诚挚地邀请您莅临展台，与我们进行深入的交流和探讨，共同探索合作与发展的可能性。

Distinguished delegates，

TanKeBlue Semiconductor Co., Ltd. sincerely invite you to participate in the 5th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2024)！

APCSCRM 2024 will be grandly held in Grand Skylight International Hotel Shenzhen Pingshan, China, on November 06-08, 2024, for better accelerating the academic research, technological progress and industrial upgrading of silicon carbide and other wide bandgap semiconductor industries in the Asia-Pacific region.

During the conference, TanKeBlue Semiconductor Co., Ltd. as a special sponsor will exhibit the latest products and technologies on booth VIP01. We sincerely invite you to visit our booth for in-depth exchanges and discussions, and explore the possibilities of cooperation and development together.

企业简介/Company profile

北京天科合达半导体股份有限公司（简称“北京天科合达”）成立于2006年9月，是国内率先从事第三代半导体碳化硅单晶衬底及相关产品研发、生产和销售的高科技企业之一。公司现已拥有一个研发中心，三家全资子公司和一家控股子公司。北京天科合达以满足国家重大需求为己任，以推动碳化硅产业链高质量发展为目标，主动承担国家级碳化硅领域多项重大科研专项，通过不断的技术创新，引领国内碳化硅衬底材料的发展方向。根据国际知名咨询机构YOLE的行业报告，北京天科合达现已成为全球第二大的碳化硅衬底材料供应商。

Established in September 2006, Beijing TanKeBlue Semiconductor Co., LTD. (hereinafter referred to as "Beijing TanKeBlue") is one of the leading high-tech enterprises engaged in the research and development, production and sales of the third generation semiconductor silicon carbide single crystal substrate and related products in China. The company now has a research and development center, three wholly-owned subsidiaries and one holding subsidiary.Beijing TanKeBlue takes it as its own responsibility to meet the major needs of the state, and takes the goal of promoting the high-quality development of silicon carbide industry chain, and takes the initiative to undertake a number of major scientific research projects in the field of national silicon carbide, and leads the development direction of domestic silicon carbide substrate materials through continuous technological innovation. According to the industry report of YOLE, an internationally renowned consulting agency, Beijing TanKeBlue has now become the world's second largest supplier of silicon carbide substrate materials.

产品简介/About Production

一、主要产品-导电型SiC衬底

Main products - conductive SiC substrate

8英寸导电型SiC衬底

8 "conductive SiC substrate

6英寸导电型SiC衬底

6 "conductive SiC substrate

导电型碳化硅衬底是导电型碳化硅晶体经过切割、研磨、抛光、清洗等工序加工形成的单晶薄片。单晶衬底薄片作为第三代半导体的重要原材料，经过同质外延生长、晶圆制造、封装检测等环节，可制成碳化硅基功率器件，是第三代半导体产业发展的重要基础材料。

6英寸导电型衬底是目前行业主流尺寸产品。我们的6英寸导电型衬底在品质上已达到国际标准，并且具备卓越的性价比优势。经过下游客户的全面验证，产品性能稳定可靠，已在车规级和工业级应用中取得显著成果。对于未来的行业趋势，8英寸导电型衬底将成为下一代的主流产品。我们的8英寸导电型衬底在质量上与6英寸持平，未来，公司将依据客户的特定需求，同步增加8英寸衬底的产量，并致力于减少生产成本，以推动8英寸衬底技术的进一步发展。

Conductive silicon carbide substrate is a single crystal sheet formed by cutting, grinding, polishing and cleaning of conductive silicon carbide crystal. As an important raw material of the third generation semiconductor, single crystal substrate sheet can be made into silicon carbide based power devices through homogeneous epitaxial growth, wafer manufacturing, packaging and testing, and is an important basic material for the development of the third generation semiconductor industry.

The 6-inch conductive substrate is the mainstream size product in the industry. Our 6-inch conductive substrates meet international standards in terms of quality and offer an excellent price/ performance ratio. After comprehensive verification by downstream customers, the product performance is stable and reliable, and has achieved remarkable results in vehicle gauge level and industrial level applications. For future industry trends, 8-inch conductive substrates will become the mainstream products of the next generation. Our 8-inch conductive substrate is the same quality as the 6-inch substrate, and in the future, the company will increase the production of 8-inch substrate according to the specific needs of customers, and is committed to reducing production costs to promote the further development of 8-inch substrate technology.

二、主要产品-导电型SiC 外延片

Main products - conductive SiC epitaxial sheet

8英寸导电型SiC外延片

8 "conductive SiC epitaxial sheet

6英寸导电型SiC外延片

6 "conductive SiC epitaxial sheet

碳化硅外延片是利用碳化硅外延设备在自产碳化硅衬底上生长一层高质量的碳化硅单晶薄膜，制成碳化硅外延片。碳化硅外延片经过晶圆制造、封装检测等环节，可制成碳化硅功率器件。

除了在导电型碳化硅衬底领域取得显著成就外，天科合达在碳化硅外延片的研发上也取得了重要进展。公司通过优化外延工艺，有效提升外延工艺水平和降低致命缺陷数量，大幅提高外延良率。外延技术的进步将树立天科合达市场竞争新优势，并且，我们提供的“衬底+外延”一体化解决方案也将为我国碳化硅产业链的发展进步做出积极贡献。

Silicon carbide epitaxial sheet is made by using silicon carbide epitaxial equipment to grow a high quality silicon carbide single crystal film on the silicon carbide substrate. Silicon carbide epitaxial wafer can be made into silicon carbide power devices through wafer fabrication, packaging and testing. In addition to the remarkable achievements in the field of conductive silicon carbide substrates, Tianke Heda has also made important progress in the development of silicon carbide epitaxial sheets. By optimizing the epitaxy process, the company effectively improves the epitaxy process level and reduces the number of fatal defects, and greatly improves the epitaxy yield. The progress of epitaxial technology will establish a new competitive advantage in the market of Tianke Heda, and the integrated solution of "substrate + epitaxial" provided by us will also make positive contributions to the development and progress of China's silicon carbide industry chain.