尊敬的业内同仁，您好！

青岛华旗科技有限公司诚挚地邀请您参加11月6日-8日在中国深圳·深圳坪山格兰云天国际酒店举办的第五届亚太碳化硅及相关材料国际会议。

在会议期间，青岛华旗科技有限公司将在NO.19展台上展出最新产品和技术，我们诚挚地邀请您莅临展台，与我们进行深入的交流和探讨，共同探索合作与发展的可能性。

Distinguished delegates，

QINGDAO HUAQI TECHNOLOGY CO., LTD. sincerely invite you to participate in the 5th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2024)！

APCSCRM 2024 will be grandly held in Grand Skylight International Hotel Shenzhen Pingshan, China, on November 06-08, 2024, for better accelerating the academic research, technological progress and industrial upgrading of silicon carbide and other wide bandgap semiconductor industries in the Asia-Pacific region.

During the conference, QINGDAO HUAQI TECHNOLOGY CO., LTD. will exhibit the latest products and technologies on booth NO.19. We sincerely invite you to visit our booth for in-depth exchanges and discussions, and explore the possibilities of cooperation and development together.

企业简介/Company profile

青岛华旗科技有限公司（青岛精诚华旗微电子设备有限公司,1993年）是领先的半导体工艺装备制造商，为集成电路IC分立器件（功率器件等）、MEMS、三代化合物半导体厂家提供优异的前工序工艺专用设备

半导体工艺设备服务于硅器件集成电路及三代半导体工艺：Si，GaN/Ga2O3 /SiC/GaAs/InP等。三十年专业制造，装备广泛应用于制造企业、大专院校、科研院所。

Qingdao Huaqi Technology Co., Ltd. (Qingdao Jingcheng Huaqi Microelectronics Equipment Co., Ltd., 1993) is a leading semiconductor process equipment manufacturer, providing excellent pre process process equipment for integrated circuit IC discrete devices (power devices, etc.), MEMS, and third-generation compound semiconductor manufacturers

Semiconductor process equipment serves silicon device integrated circuits and third-generation semiconductor processes such as Si, GaN/Ga2O3/SiC/GaAs/InP. Thirty years of professional manufacturing, equipment is widely used in manufacturing enterprises, colleges, and research institutes.

产品简介/About Production

一、HVPE系统

HVPE System

用于同质或在蓝宝石、碳化硅等衬底上外延生长GaN、GaAs、Ga2O3、AlN薄膜、厚膜及晶体外延生长等。

Used on sapphire, SiC substrate epitaxial growth of GaN, GaAs, Ga2O3, AlN thin film, thick film and crystal epitaxial growth.

█ 工作温度：200～1200℃/ 1600℃/ 2000℃

Temperature:200-1200℃/1600℃/2000℃

█ 衬底尺寸：2"、4"、6"、8"

Substrate size：2"、4"、6"、8"

█ 典型工艺：用户要求随机提供

Typical process：User requests random provision

█ 结构：水平/垂直，片数：1/3/6/多片

Structure：Horizontal/Vertical, Loading capacity:1/3/6/multi-wafer

█ 多温区，动态高精度生长条件控制

Multi-zone, high-precision dynamic growth conditions control

█ 低压、常压、微正压工艺方式，衬底片升降、旋转（厚膜/晶体生长）

Process methods, low pressure,atmospheric, positive pressure, Substrate sheet vements, rotation(thick film/crystal growth)

█ 安全完善的供气及监控系统，泄露、偏差等异常保护

Security and perfect gas supply system, leakage, deviation and other abnormal protection

二、MOVPE（MOCVD）系统

MOVPE（MOCVD）System

用于在蓝宝石、碳化硅等衬底上进行2～6/8寸GaN、GaAs、Ga2O3外延薄膜生长。

Used on sapphire, SiC substrate epitaxial growth of 2-6/8 inch GaN, GaAs, Ga2O3 thin film.

█ 研发型：1～3（6）片，生产型：21～49片

R&D:1-3(6)wafers, Production:21-49 wafers

█ 全自动化独立控制的反应腔运行模式

Fully automatic and independently controlled reaction chamber operation

█ 多种典型工艺，参数精准控制，实时监控系统

Accurate parameter control and real-time monitoring system

三、SiC高温氧化/退火炉系列

SiC High Temperature Oxidation/Annealing Furnace Series

高温氧化/退火炉系统主要用于化合物半导体SiC或GaN的4"6"8"晶圆片或其他尺寸工艺片的高温氧化/退火、活化等工艺。

The high-temperature oxidation/annealing furnace system is mainly used for high-temperature oxidation/annealing, activation and other processes of 4 "6" 8 "wafers or other sized process wafers of compound semiconductors SiC or GaN.

█ 高温退火工艺温度：2000℃，加热体更高
High temperature annealing process temperature: 2000℃, higher heating element

█ 高温氧化工艺温度：1350℃/1500℃，加热体更高
High temperature oxidation process temperature: 1350℃/1500℃, higher heating element

█ 小批量R&D为5～25片/炉，生产型为50～100片/炉
Small batch R&D is 5-25 pieces/furnace, production type is 50-100 pieces/furnace

█ 常压/真空压力控制，极限＜10-3mbar，工艺压力：1～25mbar
Atmospheric/vacuum pressure control, limit<10-3mbar, process pressure: 1-25 mbar

█ 炉型结构：水平/垂直

Furnace structure: horizontal/vertical

█ 自动/全自动（盒对盒）

Automatic/Fully Automatic (CST to CST)

四、氧化扩散炉/LPCVD系统(垂直/水平)

Oxidation Diffusion Furnace /LPCVD System (vertical/horizontal)

垂直氧化退火炉用于IC集成电路、MEMS、电力电子器件、光电子器件等领域，6"、8"、12"晶圆的氧化、扩散、合金、退火等工艺。

Vertical oxidation anneal system for IC,MEMS,electronic devices, LED and other fields, 6", 8" ,12"wafer oxidation,Diffusition, alloy, annealing etc.

█ 垂直/水平结构，高效产能，150片/批

Vertical/horizontal structure, high productivity, 150 wafers/batch

█ 6",8",6"/8"兼容,12"

6 ",8", 6"/8"compatible,12"

█ 颗粒等控制符合各工艺要求

Control of particle size uniformity, international standards

█ 全自动，盒对盒，AGV/OHT对接等

Automatic process, CST to CST,AGV/OHT docking, etc

█ 高集成度，晶圆工厂MES系统对接，符合SECSⅡ/HSMS/GEM等标准

Highly integrated, complete factory MES system docking, meet the SECSⅡ/HSMS/GEM standards

五、废气处理机系列（等离子体+水洗、电燃烧+水洗、水洗、干式吸附、氨分解等）及特气柜系列

Exhaust gas treatment series (plasma + water washing, electric combustion + water washing, water washing, dry adsorption, ammonia decomposition, etc.) and special gas cabinet series

█ 等离子体+水洗废气处理，主要用于PFCs气体（CF4、NF3、SF6等）特殊场合要求的废气处理处理，高效节能环保。
Plasma+water washing exhaust gas treatment, mainly used for exhaust gas treatment required in special occasions of PFCs gases (CF4, NF3, SF6, etc.), efficient, energy-saving and environmentally friendly

█ 电燃烧+水洗废气处理，处理的气体种类包括SiH4、NH3、HCL、PH3、B2H6(BH3)、H2、CHF3、DEZ等的废气处理，高效节能环保。
Electric combustion+water washing exhaust gas treatment, treating gases including SiH4, NH3, HCL, PH3, B2H6 (BH3), H2, CHF3, DEZ, etc. for efficient, energy-saving, and environmentally friendly exhaust gas treatment.

█ 干式吸附