第五届亚太碳化硅及相关材料国际会议(APCSCRM 2024)将于2024年11月6日至8日在中国·深圳坪山格兰云天国际酒店隆重举行本次会议以“芯时代开放创新·芯机遇合作发展”为主题,将设置大会报告、专场报告、口头报告、海报展示、新产品新技术展览等多种形式,聚焦宽禁带半导体(SiC,GaN,Ga2O3,AlN,Diamond)相关材料、器件、模块及前沿应用跨学科、多主题,针对全球行业发展焦点、热点、痛点,汇聚全球知名专家学者、企业领袖、行业精英,共同交流宽禁带半导体材料发展的前沿技术成果和最新市场动态,畅享全球技术应用新思路、新赛道,交换产业前瞻新观察、新观点。

The 5th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2024) will be held in Shenzhen, China from November 6th to 8th, 2024. The conference is themed "Open · Innovation·Collaborative Development", focusing on multiple topics related to wide bandgap semiconductor materials (SiC, GaN,Ga2O3,AlN, Diamond), devices, modules, and applications.During the same period of the conference, a professional exhibition area for wide bandgap semiconductors industry will also be set up, which will focus on displaying new technologies, new achievements and new products in the fields of consumables, intelligent equipments, advanced materials, devices, sealing and testing and terminal products, etc. It will set up an interactive platform for the upstream and downstream of wide bandgap semiconductors industry chain for efficient exchanges, and promote the development of globalization and cooperation of the whole industry chain of broadband semiconductors!

会议信息 / APCSCRM 2024 Information

一、会议名称/Name:

“芯时代开放创新·芯机遇合作发展”——第五届亚太碳化硅及相关材料国际会议(APCSCRM 2024)

Open·Innovation·Collaborative Development——the 5th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2024)

二、会议时间地点/Date&Venue:

2024.11.6—11.8

中国·深圳,深圳坪山格兰云天国际酒店

Grand Skylight International Hotel,

Shenzhen, Guangdong,China

三、会议网址/Website:

https://apcscrm2024.casconf.cn/

去官网查看会议更多信息!

四、组织机构/Organization:

五、会议安排/Schedule:

五、报名参会/Register:

扫码立刻报名

Scan to Register

会议委员会 / APCSCRM 2024 Committee

大会联合主席 / General Assembly Co-Chairs

陈小龙/Xiaolong CHEN

中国科学院物理研究所/研究员;

北京天科合达半导体股份有限公司/首席科学家;

宽禁带半导体技术创新联盟/理事长

Institute of Physics,CAS, Researcher;

Beijing TanKeBlue Semiconductor Co., Ltd. ,Chief Scientist;

Innovation Association of Wide Bandgap Semiconductor Technology (IAWBS)/President

Kevin J . CHEN

香港科技大学,首席教授,中国香港

The Hong Kong University of

Science and Technology ,Chair Professor, Hong Kong, China

Daniela Gogova

林雪平大学,首席研究员,保加利亚

Linköping University,Principal Research Engineer, Bulgaria

顾问委员会 / Advisory committee

Hiroshi Kanazawa、Noriyuki IWAMURO、Won-Jae LEE、Guo-quan LU、Josef LUTZ、Gourab MAJUMDAR、Tadatomo SUGA、Katsuaki SUGANUMA、Toru UJIHARA、郝跃、江风益、李树深、刘明、刘胜、刘益春、罗毅、彭练矛、田永君、屠海令、王占国、杨德仁、叶志镇、俞大鹏、张跃、郑婉华、郑有炓、祝宁华、祝世宁、邹广田

组织委员会 / Organizing committee

Andy、Manabu ARAI、Tony Chau、Hsien-Chin CHIU、Poshun CHIU、Andy Chuang、Yasuto HIJIKATA、Lee Kung-Ye、Chi Chung Ling 、Teng LONG、Li LongZheng、Hideharu MATSUURA、Tokuyasu MIZUHARA、Chulmin OH、Noboru OHTANI、Norbert Pluschke、Man Hoi Wong 、Liang Wu、Hidekazu YOKOO、敖金平、柏松、陈弘达、丛茂杰、董博宇、郭丽伟、郝建民、贾志泰、金鹏、于彤军、马雷、李晋闽、李忠辉、李泠、林健、刘冰冰、刘国友、刘建利、刘锋、龙世兵、陆海、马琰铭、马晓华、潘林、皮孝东、秦明礼、沈波、唐为华、陶绪堂、万玉喜、王宏兴、王燕、温旭辉、徐科、杨媛、杨小天、杨霏、于洪宇、张源涛、张清纯、郑雪峰、仲正、朱嘉琦

程序委员会 / Procedure committee

主席:彭同华 (天科合达 董事/常务副总经理)

副主席:刘祎晨、曾江、王文军、许恒宇

委员:陈炳安、陈蛟、陈天宇、邓小川、冯淦、高冰、关赫、郭辉、郭建刚、郭清、郭钰、韩景瑞、和巍巍、侯喜锋、黄志伟、霍永隽、吉丽霞、贾强、贾仁需、金锐、金士锋、孔令沂、雷光寅、李辉、李赟、梁琳、刘春俊、刘南柳、娄艳芳、梅云辉、倪炜江、宁圃奇、钮应喜、潘建宇、潘尧波、任泽阳、史慧玲、宋波、宋华平、汤益丹、王晨曦、王东萃、王刚、王蓉、王伟达、王英民、魏进、徐永宽、许照原、闫方亮、杨恒、杨树、应天平、袁俊、曾正、张峰、张国强、张瑾、张楠、张星、张旭芳、张泽盛、张紫辉、赵鹏、郑红军、郑伟、郑泽东、钟蓉

*(以上排名均按姓氏首字母排序)

(Alphabetically by surname)


部分参会嘉宾 / Part of Guests


郝 跃 / Yue HAO

中国科学院院士,西安电子科技大学,教授

Academician of Chinese Academy of Sciences;

Xidian University,professor,China


刘 胜 / Sheng Liu

中国科学院院士,武汉大学,教授

Academician of Chinese Academy of Sciences;

Wuhan university,professor, China


陈小龙 /Xiaolong CHEN

中国科学院物理研究所,研究员;

北京天科合达半导体股份有限公司,首席科学家;

宽禁带半导体技术创新联盟,理事长

Institute of Physics,CAS, Researcher;

Beijing TanKeBlue Semiconductor Co., Ltd. ,Chief Scientist;

Innovation Association of Wide Bandgap Semiconductor Technology (IAWBS)/President


Kevin J . CHEN

香港科技大学,首席教授,中国香港

The Hong Kong University of Science and Technology ,Chair Professor, Hong Kong, China

报告题目:异质宽禁带半导体功率电子技术

Topic:Heterogenous Wide-Bandgap Semiconductor Power Electronics


Hsien-Chin CHIU

长庚大学,教授,中国台湾

Chang Gung University,Professor,Taiwan, China

报告题目:高效 PSU 和射频放大器应用对硅基氮化镓电子器件的性能需求

Topic:The Performance Demands to GaN on Si Electronics devices for High Efficiency PSU and RF Amplifiers Applications


Daniela Gogova

林雪平大学,首席研究员,保加利亚

Linköping University,Principal Research Engineer, Bulgaria

报告题目:开发新一代大功率 Ga2O3材料

Topic:Developing next generation high-power Ga2O3 material


Vinod Nair

Halo Industries,Inc.,销售总监,美国

Halo Industries,Inc.,Head Sales and Marketing,America


YI HE

3M,电子与材料部全球实验室主任,美国

3M Electronics & Materials Solutions Division Global Laboratory Director,America

报告题目:3M 解决方案如何提高 SiC 工艺的产量、稳定性和成本拥有率

Topic:How 3M solution improve yield, stability and cost ownership for SiC process


Yasuto HIJIKATA

琦玉大学 ,教授,日本

Saitama University,Professor,Japan

报告题目:一种嵌入MOS接口色心的SiC单光子发射器件

Topic:A SiC Single-Photon Emitting Device Embedded with the MOS Interface Color Centers


Noriyuki IWAMURO

筑波大学 ,教授,日本

University of Tsukuba,Professor,Japan

报告题目:SiC MOSFETs 研究进展

Topic:Recent Progress of SiC MOSFETs


Hiroshi Kanazawa

Resonac Corporation,SiC研发部总监,日本

Resonac Corporation,Head of SiC Research and Development Department,Japan

报告题目:Resonac SiC外延片研发综述

Topic:Review for Resonac’s SiC Epiwafer Development


JIANBO LIANG

大阪公立大学,教授,中国

Osaka Metropolitan University,Professor,China

报告题目:3C-SiC与多晶金刚石的直接键合技术在高功率GaN器件中的应用

Topic:Direct bonding of 3C-SiC and polycrystalline diamond for high-power GaN device applications


Francis Chi-Chung LING

香港大学,副教授,中国香港

THE UNIVERSITY OF HONG KONG,Associate Professor,Hongkong,China

报告题目:SiC 器件的缺陷工程

Topic:Defect engineering of SiC devices


Josef LUTZ

开姆尼兹工业大学,教授,德国

Chemnitz University of Technology,Professor,Germany

报告题目:SiC MOSFET 体二极管的开关行为和坚固性

Topic:The SiC MOSFET body diode switching behavior and ruggedness


Gourab MAJUMDAR

三菱电机,日本

Mitsubishi Electric Corporation,Japan


Vinod Nair

Halo Industries,Inc.,销售总监,美国

Halo Industries,Inc.,Head Sales and Marketing,America


Hideki Sako

Toray Research Center, Inc.,实验室主任,日本

Toray Research Center, Inc.,Laboratory Chief,Japan

报告题目:利用透射电子显微镜和镜面投影电子显微镜表征SiC晶圆CMP过程中局部引入的抛光损伤

Topic:Characterization of polishing-related damage locally introduced during CMP in SiC wafer using transmission electron microscopy and mirror projection electron microscopy


Tan CheeKeong

香港科技大学(广州),副教授;

广州拓诺稀科技有限公司, 创始人,马来西亚

The Hong Kong University of Science and Technology(Guangzhou),Associate Professor,Malaysia

报告题目:超宽禁带氧化镓化合物薄膜设计与制备

Topic:Ultrawide bandgap gallium oxide compound semiconductor thin film design and epitaxial growth


Yokoo HIDEKAZU

日本爱发科株式会社,技术总监,日本

ULVAC, Inc.,Technical Director,Japan

报告题目:离子注入技术研究

Topic:Regarding SiC ion implantation technology


Yoon Soon Fatt

新加坡国立大学,教授,新加坡

National University of Singapore,Technical Professor, Singapore

报告题目:大晶格失配III-V半导体集成的挑战——材料视角

Topic:Challenges in large lattice-mismatched III-V semiconductors integration – A Materials Perspective



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