第五届亚太碳化硅及相关材料国际会议（APCSCRM 2024）将于2024年11月6日至8日在中国·深圳坪山格兰云天国际酒店隆重举行。本次会议以“芯时代开放创新·芯机遇合作发展”为主题，将设置大会报告、专场报告、口头报告、海报展示、新产品新技术展览等多种形式，聚焦宽禁带半导体（SiC，GaN，Ga2O3，AlN，Diamond）相关材料、器件、模块及前沿应用跨学科、多主题，针对全球行业发展焦点、热点、痛点，汇聚全球知名专家学者、企业领袖、行业精英，共同交流宽禁带半导体材料发展的前沿技术成果和最新市场动态，畅享全球技术应用新思路、新赛道，交换产业前瞻新观察、新观点。

会议鼓励宽禁带半导体材料生长、器件、模块和应用等领域理论和技术的学习与交流，欢迎国内外高校、科研院所和企事业单位相关专业技术人员踊跃参与投稿！优秀稿件将有机会推荐至《Chinese Physics B》、《Chinese Journal of Electrical Engineering》、《Frontiers in Materials》及《Functional Diamond》等权威期刊，经专家评审通过后发表。此外，优秀稿件还将参加优秀海报评选，获奖海报将获得奖金奖励或精美礼品，更有机会在会议现场进行口头报告与大家共同交流。

To promote industrial technology exchange and application development, and build an open, innovative, and cooperative international cooperation environment, the 5th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2024) will be held in Shenzhen, China from November 6th to 8th, 2024. The conference is themed "Open·Innovation·Collaborative Development", focusing on multiple topics related to wide bandgap semiconductor (SiC，GaN，Ga2O3，AlN，Diamond ect.,) materials, devices, modules, and applications. It invites renowned experts around the world to share the latest research progress, exchange forward-looking views of the industry, showcase the advanced achievements of enterprises of silicon carbide and related wide bandgap semiconductor materials.

We encourage the study and exchange of theories and technologies in the fields of wide band gap semiconductor material growth, device fabrication and packaging, module application, etc., We welcome professional and technical personnel in the related fields from domestic and overseas universities, research institutes and enterprises to submit papers and participate in the conference!

The outstanding papers selected by the organizing committee will have the opportunity to be recommended to authoritative journals of “Chinese Physics B”, “Chinese Journal of Electrical Engineering”, “Frontiers in Materials”, and“Functional Diamond”, and will be published after expert review and approval. In addition, outstanding papers will also participate in the Excellent Poster Selection or make oral presentation in the conference. Winning posters will receive bonus!

Let’s submit now!

征文征稿

Call for Papers

征稿范围/Scope of Submission

凡以宽禁带半导体为论述主体，在理论或应用实践上具有创新价值的，有科学依据和可靠数据的技术报告，阶段性成果报告，以及属于前沿技术，并对宽禁带半导体学科发展有指导意义的展望评论性论文，均可投稿，主题包括但不限于：

材料生长与加工（晶体和外延生长、基础材料研究、材料加工技术等）
材料缺陷与表征（材料特性、缺陷控制技术、表征技术等）
装备设计、工艺和特性
器件设计、工艺和测试（器件工艺及设计、新型器件和特性、建模和仿真、新型测试和表征技术等）
器件、模块封装、可靠性及其应用

Technical reports or temporary result reports focusing on wide bandgap semiconductor, with innovative value in the theory or application practice as well as scientific basis and reliable data are acceptable. Prospective review papers of frontier technology and are of guiding significance to the development of the wide bandgap semiconductors are also acceptable, whose topics include but not limit to:

Materials Growth and Processing
Materials Defects and Characterization
Equipment design, Process and Characteristics
Device Design, Process and Test
Device, Module Packaging, Reliability and Applications

稿件要求/Requirements

只接受英文稿件，摘要或全文均可；
内容具体，突出创新研究成果，具有重要的学术价值或推广应用价值；
原创、综述、工作经验总结或技术进展报告（不涉及任何侵权问题）；
不得涉及国家秘密；
摘要不少于2页（至少一页为论文主要内容摘要，一页为论文中重要的图、表、数据）。

Papers will be accepted in English only, either in abstract or full text;
Specific, highlighting innovative research results, with important academic value or popularization and application value;
Original paper, overview, summary of work experience or technical progress report (not involving any infringement issues);
No state secrets shall be involved;
No less than 2 pages (On the first page, only text allowed, and on the second page is the important figures, tables, and data);
Please download the abstract template below.

重要日期

摘要投稿开放日期：2024年7月15日

摘要投稿截止日期：2024年10月8日

Abstract submission opens: July 15, 2024

Deadline for Abstract submission : October 8, 2024

投稿方式

摘要模板请扫描下方二维码下载；
投稿请于10月8日前将个人信息及投稿稿件发送至邮箱mishuchu@iawbs.com，邮件标题请注明“姓名+单位+APCSCRM 2024论文投稿”

(1) Please scan the "Abstract template"code to download;

(2) Please send your personal information and manuscript to mishuchu@iawbs.com before October 8th.

宽禁带半导体国际青年人才创新发展论坛

International Youth Talent Innovation and Development Forum on Wide Bandgap Semiconductors

宽禁带半导体产业作为全球前瞻性、战略性、颠覆性的先导产业，在新能源汽车、轨道交通、航空航天、储能、人工智能等领域展现出广阔的发展前景。为鼓励青年人才在宽禁带半导体领域的创新与研发，增强其在国际舞台的影响力和竞争力，促进技术观点的交流和前沿思想的碰撞，本届会议特设置了宽禁带半导体国际青年人才创新发展论坛。论坛将聚焦产业链关键领域，如材料、装备、器件等，围绕宽禁带半导体的最新研究进展、技术创新、产业化应用等核心议题展开深入探讨。会议鼓励所有在宽禁带半导体领域有所建树或正在积极探索的全球青年学者积极投稿，并将从投稿并申请报告的青年人才中遴选出优质内容进行口头报告，同与会者共同交流，推动技术创新与合作。

我们相信，通过您们的精彩分享和深入交流，宽禁带半导体国际青年人才创新发展论坛将成为推动宽禁带半导体领域科技进步和创新发展的重要力量。

In order to encourage young talents to innovate and develop in the field of wide bandgap semiconductors, enhance their influence and competitiveness on the international stage, promote the exchange of technical viewpoints and the collision of cutting-edge ideas, we set up the International Youth Talent Innovation and Development Forum on Wide Bandgap Semiconductors.

The forum conducts in-depth discussions on the latest research progress, technological innovation, and industrial applications, ect., We encourage all young scholars from around the world in the field of wide bandgap semiconductors to actively submit papers, and the high-quality content will make oral presentations at the conference and communicate with the participants to promote technological innovation and cooperation.

优秀海报评选

Excellent poster Award

本届会议鼓励学者之间的交流和分享，努力营造开放、和谐的学术环境，让更多新思路、新想法进行碰撞交汇，特设立海报交流区，促进宽禁带半导体领域国际化交流，并从提交的海报中遴选出优秀海报，颁发证书。

We encourage exchange and sharing among scholars, strives to create an open and harmonious academic environment, and allows more new ideas and thoughts to collide and intersect. We set up poster exchange area to present the latest achievement in the field of wide bandgap semiconductors, and outstanding posters will have the bonus and awarded certificates.

奖项设置/Award Setting

一等奖：1500元奖金（3名）

二等奖：1000元奖金（5名）

三等奖：500元奖金（10名）

1st prize: RMB 1500 (3 places)

2nd Prize: RMB 1000(5 places)

3rd Prize: RMB 500 (10 places)

合作期刊

Journal Introduction

《Chinese Physics B （CPB）》是中国科学院物理研究所和中国物理学会主办的，国内载文量最大、总被引频次最高、影响力最广的物理学综合性英文学术期刊。月刊，被SCI, EI, Scopus等收录，入选“中国科技期刊卓越行动计划”。报道国内外物理学各领域（粒子物理与核物理类除外）的创新性研究成果。发文栏目有原始论文、快讯、综述、数据论文、仪器与测量论文、物理学计算程序论文等。CPB已组织出版多个面向国家重大需求和物理学发展前沿的物理学基础研究和热点研究专题，并在国内物理类期刊中率先开辟“Data Paper”, “Instrumentation and Measurement”, “Computational Programs for Physics”栏目。

“Chinese Physics B（CPB）”is a comprehensive English academic journal of physics hosted by the Institute of Physics ,CAS and the Chinese Physical Society, with the largest number of papers, the highest total citation frequency, and the most influential in China. Monthly, indexed by SCI, EI, Scopus, etc.,The journal reports innovative research achievements in various fields of physics (excluding particle physics and nuclear physics) both domestically and internationally. The publication section includes original papers, newsletters, reviews, data papers, instrumentation and measurement papers, physics calculation program papers, etc.

《Chinese Journal of Electrical Engineering，CJEE》创刊于2015年，季刊，主管单位为中国机械工业联合会，主办单位为机械工业信息研究院，与IEEE合作，OA出版，主编为清华大学赵争鸣教授。

主要刊登方向包括先进电机、电力电子及其应用、交通电气化、新能源发电、储能、生物电磁等。目前已被ESCI、Ei Compendex、Scopus、INSPEC、DOAJ、EBSCO、中国科学引文数据库（CSCD）等收录，入选能源电力领域高质量科技期刊分级目录，连续多年获评中国国际影响力优秀学术期刊，荣获2022年度机械工业科学技术奖科技进步三等奖。

“Chinese Journal of Electrical Engineering，CJEE” was founded in 2015 as a quarterly publication. The main publishing directions include advanced motors, power electronics and their applications, transportation electrification, new energy generation, energy storage, bioelectronics, etc. Currently, it has been approved by