To promote industrial technology exchange and application development, and build an open, innovative, and cooperative international cooperation environment, the 5th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2024) will be held in Shenzhen, China from November 6th to 8th, 2024. The conference is themed "Open·Innovation·Collaborative Development", focusing on multiple topics related to wide bandgap semiconductor (SiC，GaN，Ga₂O₃，AlN，Diamond ect.,) materials, devices, modules, and applications. It invites renowned experts around the world to share the latest research progress, exchange forward-looking views of the industry, showcase the advanced achievements of enterprises of silicon carbide and related wide bandgap semiconductor materials.

We encourage the study and exchange of theories and technologies in the fields of wide band gap semiconductor material growth, device fabrication and packaging, module application, etc., We welcome professional and technical personnel in the related fields from domestic and overseas universities, research institutes and enterprises to submit papers and participate in the conference!

The outstanding papers selected by the organizing committee will have the opportunity to be recommended to authoritative journals of “Chinese Physics B”, “Chinese Journal of Electrical Engineering”, and “Frontiers in Materials”, and will be published after expert review and approval. In addition, outstanding papers will also participate in the Excellent Poster Selection or make oral presentation in the conference. Winning posters will receive bonus!

Let’s submit now!

01.Conference

Open·Innovation·Collaborative Development——the 5th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2024)

Date: Nov. 6th, 2024 -- Nov. 8th, 2024

Venue: Grand Skylight International Hotel Shenzhen Pingshan & Yanzi Lake International Convention and Exhibition Center

Location: No.36 Ruifing Road,Pingshan District,Shenzhen,Guangdong, China

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Technical reports or temporary result reports focusing on wide bandgap semiconductor, with innovative value in the theory or application practice as well as scientific basis and reliable data are acceptable. Prospective review papers of frontier technology and are of guiding significance to the development of the wide bandgap semiconductors are also acceptable, whose topics include but not limit to:

l Materials Growth and Processing

l Materials Defects and Characterization

l Equipment design, Process and Characteristics

l Device Design, Process and Test

l Device, Module Packaging, Reliability and Applications

①Papers will be accepted in English only, either in abstract or full text;

②Specific, highlighting innovative research results, with important academic value or popularization and application value;

③Original paper, overview, summary of work experience or technical progress report (not involving any infringement issues);

④No state secrets shall be involved;

⑤No less than 2 pages (On the first page, only text allowed, and on the second page is the important figures, tables, and data);

⑥Please download the abstract template below.

Abstract submission opens: July 15, 2024

Deadline for Abstract submission : October 8, 2024

(1) Please click on the MiniProgram to download the abstract template;

(2) Please send your personal information and manuscript to mishuchu@iawbs.com before October 8th. 

In order to encourage young talents to innovate and develop in the field of wide bandgap semiconductors, enhance their influence and competitiveness on the international stage, promote the exchange of technical viewpoints and the collision of cutting-edge ideas, we set up the International Youth Talent Innovation and Development Forum on Wide Bandgap Semiconductors.

The forum conducts in-depth discussions on the latest research progress, technological innovation, and industrial applications, ect., We encourage all young scholars from around the world in the field of wide bandgap semiconductors to actively submit papers, and the high-quality content will make oral presentations at the conference and communicate with the participants to promote technological innovation and cooperation.

We encourage exchange and sharing among scholars, strives to create an open and harmonious academic environment, and allows more new ideas and thoughts to collide and intersect. We set up poster exchange area to present the latest achievement in the field of wide bandgap semiconductors, and outstanding posters will have the bonus and awarded certificates.

《Chinese Physics B（CPB）》is a comprehensive English academic journal of physics hosted by the Institute of Physics ,CAS and the Chinese Physical Society, with the largest number of papers, the highest total citation frequency, and the most influential in China. Monthly, indexed by SCI, EI, Scopus, etc.,The journal reports innovative research achievements in various fields of physics (excluding particle physics and nuclear physics) both domestically and internationally. The publication section includes original papers, newsletters, reviews, data papers, instrumentation and measurement papers, physics calculation program papers, etc. 

《Chinese Journal of Electrical Engineering，CJEE》 was founded in 2015 as a quarterly publication. The main publishing directions include advanced motors, power electronics and their applications, transportation electrification, new energy generation, energy storage, bioelectronics, etc. Currently, it has been approved by ESCI、 Ei Compendex、Scopus、INSPEC、DOAJ、EBSCO、CSCD and other databases, it has been included in the graded directory of high-quality scientific and technological journals in the field of energy and power.