【Invitation】苏州优晶光电科技有限公司邀您参加APCSCRM 2023

尊敬的业内同仁，您好！

苏州优晶光电科技有限公司诚挚地邀请您参加11月8日-10日在中国北京·朗丽兹西山花园酒店举办的第四届亚太碳化硅及相关材料国际会议。

Distinguished delegates，

SUZHOU UKING PHOTOELECTRIC TECHNOLOGY CO.,LTD sincerely invites you to participate in APCSCRM 2023！

APCSCRM 2023 will be grandly held in PALACE GARDEN HOTEL & RESORTS Beijing, China, on November 08-10, 2023, for better accelerating the academic research, technological progress and industrial upgrading of silicon carbide and other wide bandgap semiconductor industries in the Asia-Pacific region.

关于苏州优晶光电科技有限公司

About SUZHOU UKING PHOTOELECTRIC TECHNOLOGY CO.,LTD

苏州优晶光电科技有限公司是一家集设计、研发、生产、服务和销售为一体的高新科技型企业。公司成立于2010年，一直致力于新材料、新工艺、新装备的研发、制造，并可提供高端装备升级、改造等成套技术服务。2020年初，公司在昆山成立碳化硅长晶设备生产基地，扩大国产碳化硅设备量产规模，为改变我国碳化硅单晶衬底材料长期依赖进口的被动局面而不懈努力。

Suzhou UKING Photoelectric Technology Co.,Ltd. is a high-tech enterpriseintegrating design，R&D，production， service and sales. Founded in 2010,Since its establishment，UKING has been committed to the R&D andmanufacturing of new materials，processes and equipment,and can providecomplete sets of technical services such as upgrading and transformation ofhigh-end equipment.

At the beginning of 2020，UKING set up a silicon carbide base inKunshan to further expand the scale of production of domestic siliconcarbide equipment,In order to change the long-term dependence on imports of silicon carbide single crystal substrate material passive situation and make unremitting efforts.

产品介绍

About Production

UKING电阻法碳化硅长晶设备

UKING（Resistance method silicon carbide long crystal equipment）

优晶光电已推出第四代机型UKING ERH SiC RV4.0电阻法碳化硅长晶设备(适用于6英寸、8英寸晶体），该机型有如下特点:

UKING has presented the 4-th generation ERH SiC growth furnace UKING ERH SiC RV4.0(suitable for 6 inch, 8 inch SiC single crystal growth), the furnace has the following character-istics:

（1）完美解决了感应炉温场均匀性差的技术难点,可实现径向和轴向温度梯度的精确控制，晶体内部缺陷少，良率高、重复性好;

Furnace UKING ERH SiC RV4.0 perfectly solves the technical difficulty of poor temperaturefield uniformity that plague induction furnace, and can realize the precise control of radial andaxial temperature gradient, with fewer internal defects of crystal, high yield and good repeat-ability;

（2）UKING ERH SiC RV4.0长晶速度快，整个过程可控制在5天之内;

The crystal growth speed of Furnace UKING ERH SiC RV4.0 is fast, the growth cycle is greatlyshortened, and the whole process can be controlled within 5 days ;

（3）设备自动化程度高,设备生长过程中无需人为操作,规模化量产、扩产速度远高于其他工艺方法。

Furnace UKING ERH SiC RV4.0 is a highly automated machine, without manual operation inthe crystal growth process, which solves the problem that the traditional process relies toomuch on operator’s experience, and is especially suitable for large-scale mass producand expansion.

（4）UKING ERH SiC RV4.0炉内最高温度可达2250℃,超过碳化硅晶体正常生长所需的温度。电源精度±10w(万分之三），温度精度控制±0.3℃(万分之1.5），压力精度控制±0.5Pa，气体流量精度控制±0.01L/h，以上是碳化硅晶体生长设备各项指标。

The highest temperature in the furnace can reach 2250℃, which exceeds the temperatrequired for the normal growth of silicon carbide crystals.Power supply accuracy±10W(3%oo), temperature accuracy ±0.3 ℃ (1.5%oo), pressure accuracy ±0.5 Pa, gas flow accuracy ±0.01 Lh.

联系我们

Contact

Web:http:///www.ukingtech.com/

Tel:李总/Ms.Li-18210147297

Mail:liwei@ukingtech.com

Add:江苏省昆山经济技术开发区杜鹃路555号，平谦迈高欧美产业园A5-A6栋

Building A5-A6, Plainvim International (Kunshan) Indusrtrial Park, No. 555, Dujuan road, Kunshan Economic & Technological Development Zone, Jiangsu Province

ABOUT APCSCRM2023

组委会联系人/Contact：

Ms. Chen: (+86) 13155757628

Mr. Hou: (+86) 13811837211

Ms. liu: (+86) 18931699592

E-mail：apcscrm@iawbs.com